A New Approach for Approximate Solution of ADE: Physical-Based Modeling of Carriers in Doping Region

The electric behavior in semiconductor devices is the result of carriers’ injection and evacuation low doping region, N-. carrier’s dynamic determined by ambipolar diffusion equation (ADE), which involves main physical phenomena region. ADE does not have a direct analytic solution since it spatio-temporal second-order differential equation. numerical most used, but inadequate to be integrated into commercial circuit simulators. In this paper, an empiric approximation proposed as ADE. was validated using final equations that were implemented simulator; results compared with experimental each phase, obtaining similarity current waveforms. Finally, advantage methodology expressions obtained can easily